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| Artikel-Nr.:
108EL-2296472 Herst.-Nr.:
NTMFS7D8N10GTWG EAN/GTIN:
k.A. |
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| Channel-Typ = N
Dauer-Drainstrom max. = 110 A
Drain-Source-Spannung max. = 100 V
Gehäusegröße = PQFN 5 x 6
Montage-Typ = SMD
Pinanzahl = 8
Drain-Source-Widerstand max. = 0,0076 Ω
Gate-Schwellenspannung max. = 4V
Anzahl der Elemente pro Chip = 1
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.Minimize conduction losses High peak UIS current capability for ruggedness Halogen-free Pb-free Weitere Informationen: | | Channel-Typ: | N | Dauer-Drainstrom max.: | 110 A | Drain-Source-Spannung max.: | 100 V | Gehäusegröße: | PQFN 5 x 6 | Montage-Typ: | SMD | Pinanzahl: | 8 | Drain-Source-Widerstand max.: | 0,0076 Ω | Gate-Schwellenspannung max.: | 4V | Anzahl der Elemente pro Chip: | 1 |
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| Weitere Suchbegriffe: mosfet 110a, 2296472, Halbleiter, Diskrete Halbleiter, onsemi, NTMFS7D8N10GTWG, Semiconductors, Discrete Semiconductors, MOSFETs |
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