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| Artikel-Nr.: 858A-9783642195679 Herst.-Nr.: 9783642195679 EAN/GTIN: 9783642195679 |
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 | Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. Weitere Informationen:  |  | Author: | Koichiro Ishibashi; Kenichi Osada | Verlag: | Springer Berlin | Sprache: | eng |
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 | Weitere Suchbegriffe: allgemeine technikbücher - englischsprachig, Elektronik / Mikroelektronik, Mikroelektronik, Technik / Allgemeines, Einführung, Lexikon, CMOS LSI; Memory cell; SRAM; Study; reliability, CMOS LSI, Memory cell, Reliability, SRAM, Study |
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